Publikationen

2024

410.
T. Herbel, M. Tarar, F. Vater and D. Kissinger, "A 130-GHz bandwidth 61-dBOhm variable-gain differential linear TIA in a 130-nm SiGe:C BiCMOS technology" in Proc. IEEE BiCMOS Compound Semicond. Integr. Circuits Technol. Symp., Fort Lauderdale, FL, Okt. 2024, pp. 130-133.
409.
A. Ergintav, F. Herzel, G. Fischer, D. Kissinger and C. Carta, "A 30 GHz PLL with automated frequency control option for robust operation in harsh environments" in Proc. Eur. Microw. Integr. Circuits Conf., Paris, France, Sep. 2024, pp. 34-37.
408.
E. C. Durmaz, C. Heine, Z. Cao, D. Kissinger and M. Wietstruck, "Advancements in the Cu pillar based PCB microfluidic system integration with SiGe BiCMOS technology" in Proc. Smart Systems Integration, Hamburg, Germany, Apr. 2024, pp. 1-4.

2023

407.
C. Heine, E. C. Durmaz, M. Wietstruck and D. Kissinger, "A microfluidic sensor platform for sub-THz dielectric spectroscopy in a SiGe BiCMOS process environment: Technology, circuits, and systems" in Proc. IEEE MTT-S Int. Microw. Biomed. Conf., Leuven, Belgium, Sep. 2023, pp. 1.
406.
Y. Liang, Q. Chen, Y. Wang, D. Kissinger and H. J. Ng, "Spur cancelling technique by folded XOR-gate phase detector and its application to a millimeter-wave SiGe BiCMOS PLL", IEEE Trans. Microw. Theory Techn., vol. 71, no. 8, pp. 3572-3584, Aug. 2023.
405.
A. Karakuzulu, W. A. Ahmad, D. Kissinger and A. Malignaggi, "A four-channel bidirectional D-band phased-array transceiver for 200 Gb/s 6G wireless communications in a 130-nm BiCMOS technology", IEEE J. Solid-State Circuits, vol. 58, no. 5, pp. 1310-1322, Mai 2023.
404.
E. Can Durmaz, C. Heine, Z. Cao, J. Lehmann, D. Kissinger and M. Wietstruck, "SiGe BiCMOS technology with embedded microchannels based on Cu pillar PCB integration enabling sub-THz microfluidic sensor applications" in Proc. IEEE Int. 3D System Integration Conf., Cork, Ireland, Mai 2023, pp. 01-04.
403.
R. Hasan, M. H. Eissa, W. A. Ahmad, H. J. Ng and D. Kissinger, "Wideband and efficient 256-GHz sub-harmonic based FMCW radar transceiver in 130-nm SiGe BiCMOS technology", IEEE Trans. Microw. Theory Techn., vol. 71, no. 1, pp. 59-70, Jan. 2023.

2022

402.
D. Kissinger, "Integrated circuits in SiGe BiCMOS for millimeter-wave and terahertz bioanalyzers (invited paper)" in Proc. IEEE MTT-S Int. Microw. Workshop Series Adv. Mat. Processes RF Terahertz Appl., Guangzhou, China, Dez. 2022, pp. 1-3.
401.
D. Kissinger, M. Kaynak and A. Mai, "Integrated millimeter-wave and terahertz analyzers for biomedical applications (invited paper)", IEEE Trans. Microw. Theory Techn., vol. 70, no. 11, pp. 5141-5158, Nov. 2022.
400.
D. Kissinger, "The MTT-S meetings and symposia committee – supporting your conference", IEEE Microw. Mag., vol. 23, no. 11, pp. 95-97, Nov. 2022.
399.
C. Heine, E. C. Durmaz, D. Wang, Z. Cao, M. Wietstruck, B. Tillack and D. Kissinger, "Towards a fully integrated sub-THz microfluidic sensor platform for dielectric spectroscopy", Frequenz, vol. 76, no. 11-12, pp. 685-697, Nov. 2022.
398.
M. K. Ali, G. Panic and D. Kissinger, "A broadband 110–170 GHz frequency quadrupler with 29 dBc harmonic rejection in a 130-nm SiGe BiCMOS technology" in Proc. Eur. Microw. Integr. Circuits Conf., Milan, Italy, Sep. 2022, pp. 44-47.
397.
A. Ergintav, F. Herzel, F. Korndörfer, T. Mausolf, D. Kissinger and G. Fischer, "A dual-modulus frequency divider up to 128 GHz in SiGe BiCMOS technology" in Proc. Eur. Microw. Integr. Circuits Conf., Milan, Italy, Sep. 2022, pp. 48-51.
396.
D. Kissinger, "D-band and terahertz frontends for 6G wireless communications in SiGe BiCMOS technologies (invited paper)" in Proc. Int. Wireless Symp., Harbin, China, Aug. 2022, pp. 1-3.
395.
A. Gadallah, M. H. Eissa, T. Mausolf, D. Kissinger and A. Malignaggi, "A 250–300 GHz frequency multiplier by-8 chain in SiGe technology" in IEEE MTT-S Int. Microw. Symp. Dig., Denver, CO, Jun. 2022, pp. 657-660.
394.
L. Pantoli, H. Bello, H. J. Ng, D. Kissinger and G. Leuzzi, "SiGe signal source for terahertz camera" in Sensors and Microsystems: Proc. AISEM Annual Conf. Sensors Microsystems, Springer, Jun. 2022, pp. 301-306.
393.
M. K. Ali, G. Panic and D. Kissinger, "A broadband low-noise amplifier for D-band communications in SiGe BiCMOS technology" in Proc. German Microw. Conf., Ulm, Germany, Mai 2022, pp. 92-95.
392.
Y. Liang, C. C. Boon, G. Qi, G. Dziallas, D. Kissinger, H. J. Ng, P. -. I. Mak and Y. Wang, "A low-jitter and low-reference-spur 320 GHz signal source with an 80 GHz integer-N phase-locked loop using a quadrature XOR technique", IEEE Trans. Microw. Theory Techn., vol. 70, no. 5, pp. 2642-2657, Mai 2022.
391.
A. Gadallah, M. H. Eissa, T. Mausolf, D. Kissinger and A. Malignaggi, "A 300 GHz low noise amplifier in 130nm SiGe SG13G3 technology", IEEE Microw. Wireless Compon. Lett., vol. 32, no. 4, pp. 331-334, Apr. 2022.
390.
W. A. Ahmad, M. Kucharski, H. J. Ng and D. Kissinger, "D-band FMCW radar with sub-cm range resolution based on a BiCMOS mmWave IC", Proc. Eur. Radar Conf., London, United Kingdom, Apr. 2022, pp. 533-536.
389.
W. A. Ahmad, M. Kucharski, H. J. Ng and D. Kissinger, "BiCMOS IQ transceiver with array-on-chip for D-band joint radar-communication applications" in IEEE Topical Meeting Silicon Monolithic Integr. Circuits RF Syst. Dig., Las Vegas, NV, Jan. 2022, pp. 78–80.
388.
A. Gadallah, M. H. Eissa, D. Kissinger and A. Malignaggi, "Performance comparison of V-band T/R amplifier module in SiGe technology using aluminium and copper back-end of line" in IEEE Topical Meeting Silicon Monolithic Integr. Circuits RF Syst. Dig., Las Vegas, NV, Jan. 2022, pp. 20-22.
387.
R. Hasan, M. H. Eissa, M. Kucharski, D. Kissinger and H. J. Ng, "Wideband, compact and efficient frequency quadrupler for sub-harmonic transceiver in 130nm SiGe BiCMOS technology" in IEEE Topical Meeting Silicon Monolithic Integr. Circuits RF Syst. Dig., Las Vegas, NV, Jan. 2022, pp. 38–40.

2021

386.
W. Ahmad, S. Schmitz, H. J. Ng and D. Kissinger, "A D-band stacked patch antenna with air trenches in BiCMOS technology," in Proc. IEEE Int. Symp. Antennas Propag., Singapore, Dez. 2021, pp. 1637–1638.