Using DFT-methods we study the electron-phonon interation of defects in the 2D material hBN. We investigate theoretically the coupling of a defect with perpendicular (VNNB) and one with parallel (C2CN) orientation of the transition dipole to the hBN layer. The article can be accessed here.
Study discussing the electron-phonon interation of defects in hBN published.
Ulm University Ulm University
Our article on the theoretical study of the electron-phonon coupling of defects in hexagonal boron nitride (hBN) with different transition dipole directions was published in IOPs "Journal of Physics:Condensed Matter".